Semiconductor module

ABSTRACT

A half bridge power module ( 1 ) comprising a substrate ( 2 ) comprising an inner load track ( 11 ), two intermediate load tracks ( 12, 14 ) and two outer load tracks ( 10,13 ), wherein an external terminal is mounted on one of the intermediate load tracks ( 12, 14 ), an external terminal ( 3, 4 ) is mounted on one of the outer load tracks ( 10, 13 ) and an external terminal ( 5 ) is mounted on the inner load track ( 11 ); wherein semiconductor switches ( 101, 12, 105, 106 ) are mounted on the outer load tracks ( 10, 13 ) and are electrically connected to the intermediate load track ( 12 ); and semiconductor switches ( 103, 104, 107, 108 ) are mounted on the intermediate load tracks ( 12, 14 ) and are electrically connected to the inner load track ( 11 ).

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional Application of U.S. patent applicationSer. No. 15/931,703, filed on May 14, 2020, and claims foreign prioritybenefits under 35 U.S.C. § 119 to German Patent Application No.102019112935.4 filed on May 16, 2019, each of which is herebyincorporated by reference in its entirety.

TECHNICAL FIELD

Semiconductor power modules are widely used in industry. For example,such a power module may be used for the controlled switching of highcurrents and can be used in power converters (such as inverters) toconvert DC to AC or vice versa, or for converting between differentvoltages or frequencies of AC. Such inverters are used in motorcontrollers or interfaces between power generation or storage, or apower distribution grid.

The semiconductor power module is designed to fulfill two majorcharacteristics: High power conversion efficiency and high powerdensity. Factors as lifetime, cost and quality are also taken intoaccount. In order to achieve high power density, high performancewide-bandgap semiconductors, such as Silicon Carbide (SiC) semiconductorswitches may be used, as they generally outperform standard siliconbased semiconductor switches, i.e. Insulated Gate Bipolar Transistors(IGBT). SiC devices put high demands on the design of the power modulefrom thermal and electrical standpoint. The wide-bandgap semiconductors(e.g., SiC semiconductor switches) have the characteristic that theyswitch very fast, meaning that the transition from conduction toblocking mode takes only a few nanoseconds.

Fast switching in electronic circuits, in combination with strayinductances, causes voltage overshoots when such semiconductor powermodules are use. These voltage overshoots increase switching losses, andmay cause EMI emissions through ringing. As current gradients duringswitching are high, the stray/parasitic inductance of the whole assemblyneeds to be as small as possible.

SiC MOSFETs are used as the semiconductor switches in applications wherehighest efficiency in small building volume is required by theapplication. SiC MOSFETs show fast switching speeds and low on-stateresistance at the same time. Since SiC wafers are expensive tomanufacture, and with current manufacturing processes it is hard tofabricate components with an acceptably low crystal failure amount, thedie are typically very small (for example, 5-25 mm²). This keeps yieldlosses low, but restricts the total current that a SiC semiconductorswitches can pass. In order to achieve high output powers, several ofthese small semiconductor switches (for example MOSFETs) need to beoperated in parallel. In applications such as automotive powerconversion, the use of multiple semiconductor switches in parallel takesup space within the semiconductor power module, yielding potentiallylarger modules. However, space is at a premium within a vehicle, andincreasing the size of modules is not generally an option. It istherefore a great advantage if innovative design of layouts can bothaccommodate multiple semiconductor switches in parallel, a balanced(symmetric) operation, low stray inductance and small overall layoutsize.

SUMMARY

It is, thus, an object of the present invention to provide a powermodule which is capable of exhibiting the simultaneous switching andbalanced operation of multiple semiconductor switches in parallel, lowerstray inductances, and more stable and efficient operation thancurrently available power modules.

According to a first aspect of the present invention the above and otherobjects are fulfilled by providing a power module providing a halfbridge, the power module comprising: at least one substrate comprisingan inner load track, two intermediate load tracks and two outer loadtracks, where the inner load track is elongated and may extendsubstantially across the at least one substrate in a first direction;wherein an external terminal is mounted on at least one of theintermediate load tracks at one end of the power module in the firstdirection; wherein an external terminal is mounted on at least one ofthe outer load tracks and an external terminal is mounted on the innerload track; wherein the external terminals are mounted at the other endof the power module to the external terminal mounted on at least one ofthe intermediate load tracks in the first direction; whereinsemiconductor switches are mounted on the outer load tracks and areelectrically connected to the intermediate load track; and whereinsemiconductor switches are mounted on the intermediate load tracks andare electrically connected to the inner load track.

The substrate may comprise an insulating base, with conducting tracks toform the circuitry required attached to the insulating base. A suitablesubstrate may be a DBC (direct bonded copper) substrate formed of twoconducting copper layers either side of an insulating ceramic layer.Other suitable substrates may include DBA (direct bonded aluminum) orother substrates well known in the field.

The term “track” is here used to specify a circuit track formed from ametal layer forming part of the substrate and insulated from othertracks by a gap. The term “load track” is here used to specify a tracksuitable for carrying a large current, such as that supplying theelectrical load for which the power module is supplying power.Suitability for large currents may be a combination of the width of thetrack and thickness of the track, forming a large cross-sectional areaand thus allowing the passage of large currents without undue heating.

The term “semiconductor switches” is here used to include any of anumber of known semiconductor switching devices. Examples of suchdevices are Thyristors, JFETs, IGBTs and MOSFETs, and they may be basedon traditional silicon technology or wide band-gap technologies such assilicon carbide (SiC).

The term “mounted” is here used to mean the permanent connection of adevice to a track, and may include an electrically conductingconnection. Means of such connections include soldering, brazing andsintering.

The term “electrically connected to” is here used to mean the connectionof part of the device to a remote track or other device. Traditionallythis form of connections made using metallic wirebonds comprisingaluminum. However, other metals such as copper may be usable. The termalso covers the use of ribbon or tape bonds, braided tapes and the useof solid metal structures such as clips or busbars.

The layout of the load tracks may be symmetric about a line extending inthe first direction.

In one embodiment of the inventive power module, each intermediate loadtrack may comprises a first elongated arm extending in the firstdirection between the outer load track and the inner load track withrespect to a second direction at right angles to the first direction,and a second elongated arm extending in the first direction between theouter load track and the edge of the substrate with respect to thesecond direction wherein at least one semiconductor switch may bemounted on an outer load track and electrically connected to a secondelongated arm of one of the intermediate load tracks.

In addition or alternatively, the inner load track may comprise a thirdelongated arm extending in the first direction between the firstintermediate load track and the edge of the substrate with respect tothe second direction, and a fourth elongated arm extending in the firstdirection between the second intermediate load track and the edge of thesubstrate with respect to the second direction, wherein at least onesemiconductor switch may be mounted on an intermediate load track andelectrically connected to an elongated arm of the inner load track.

In a particularly preferred embodiment, the power module may comprise agate contact pad which is positioned centrally in a group ofsemiconductor switches and wherein gate connections may extend radiallyfrom the gate contact pad to the semiconductor switches.

In another preferred embodiment, an external gate contact terminal maybe placed on the external surface of the power module and extendsubstantially orthogonally to the plane of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will become more fully understood from the detaileddescription given herein below. The accompanying drawings are given byway of illustration only, and thus, they are not limitative of thepresent invention. In the accompanying drawings:

FIG. 1 shows a perspective view of a first embodiment of the inventivepower module;

FIG. 2 shows a plan view of an embodiment of the substrate 2 which formspart of the power module 1 shown in FIG. 1;

FIG. 3 shows a plan view of an alternative embodiment of the substrate 2which forms part of the power module 1 shown in FIG. 1;

FIG. 4 shows a plan view of another embodiment of the substrate of theinventive power module 1;

FIG. 5 shows a plan view of another embodiment of the substrate of theinventive power module 1;

FIG. 6 shows an improvement of the layout illustrated in FIG. 5;

-   -   and

FIG. 7 shows an improvement of the layout illustrated in FIG. 4.

DETAILED DESCRIPTION

Referring now in detail to the drawings for the purpose of illustratingpreferred embodiments of the present invention, a first embodiment ofthe inventive power module 1 is shown in FIG. 1. The power module 1shown comprises a substrate 2 within the body of the power module. Thepower module 1 is designed to provide a half bridge circuit, and to thisend three DC power terminals are provided 3, 4, 5 and two AC powerterminals 6, 7 at the opposite end of the packaging. The substrate 2,and circuitry connected to it, together with the internal sections ofthe power terminals 3, 4, 5, 6, 7 are, in this embodiment, encapsulatedin a mold compound 22. Alternative embodiments are possible where thesubstrate is attached to a baseplate and/or mounted within a frame whichis subsequently filled with silicone gel and completed with a lid. Inaddition, it is also possible to mount several substrates within asingle package to provide a power module containing several halfbridges.

FIG. 2 shows an embodiment of the substrate 2 which forms part of thepower module 1 shown in FIG. 1. The substrate may be, for example, a DCB(direct copper bonded) substrate comprising a central ceramic layeracting as an insulator, and clad on both sides with a copper layer. Insome embodiments the lower copper layer is left complete, whilst theupper copper layer is etched to form a number of separate conductingtracks which form the required circuits. Onto the tracks are mountedcomponents such as semiconductor switches.

In the embodiment shown in FIG. 2 there an inner load track 11, twointermediate load tracks 12, 14 and two outer load tracks 10,13. Theinner load track 11 is elongated and extends substantially across thesubstrate 2 in a first direction 8. AC terminals terminal 6, 7 aremounted on the intermediate load tracks 12, 14 at one end of the powermodule in the first direction 8. DC terminals 3, 4, 5 are mounted on theouter load tracks 10, 13 and the inner load track 11. The DC terminals3, 4, 5 are mounted at the other end of the power module to the ACterminals 6, 7. Semiconductor switches 101, 102, 105, 106 are mounted onthe outer load tracks 10, 13 and are electrically connected to theintermediate load track 12 by means of wirebonds and semiconductorswitches 103, 104, 107, 108 are mounted on the intermediate load tracks12, 14 and are electrically connected to the inner load track 11 bymeans of wirebonds. In this embodiment the semiconductor switchescomprise SiC (silicon carbide) MOSFETs. The use of other types ofsemiconductor switches is also possible, for example IGBTs. Each set ofsemiconductor switches described above may consist of more than twosemiconductor chips.

The embodiment shown in FIG. 2 is symmetric about a line 23 extending inthe first direction 8.

FIG. 3 illustrates an alternative embodiment of the substrate 2 whichforms part of the power module 1 shown in FIG. 1;

The significant difference between these two embodiments is that theintermediate load tracks 12, 14 here comprise extended arms thatpartially surround the outer load tracks 10, 13, and allow thesemiconductor switches mounted on the outer load tracks and alternativeroute for the wirebonds that connecting to the intermediate load tracks.Each intermediate load track 12, 14 comprises a first elongated arm 15extending in the first direction 8 between the outer load track 10, 13and the inner load track 11 with respect to a second direction 9 atright angles to the first direction 8, and a second elongated arm 16extending in the first direction 8 between the outer load track 10, 13and the edge of the substrate 2 with respect to the second direction 9.In addition, the inner load track 11 comprises a third elongated arm 17extending in the first direction 8 between the first intermediate loadtrack 12 and the edge of the substrate 2 with respect to the seconddirection 9 and a fourth elongated arm 18 extending in the firstdirection 8 between the second intermediate load track 14 and the edgeof the substrate 2 with respect to the second direction 9. These armsextending from the inner load track allow the semiconductor switches101, 105, which are mounted on an intermediate load track 12, 14, analternative route for the wirebonds that connect them to the inner loadtrack.

The arms extending from the inner load track pass beneath the ACterminals 6, 7, but without making electrical contact with them.

FIG. 4 shows another embodiment of the substrate of the inventive powermodule 1. Here, the layout is topologically similar to that shown inFIG. 3. In this embodiment, gate contact pads 19 are positionedcentrally within groups of semiconductor switches 101-102, 103-104,105-106, 107-108 and the gate connections between the gate contact padand the gate connections on the top surface of each of the semiconductorswitches extend radially from the gate contact pad 19 to thesemiconductor switches 101-108.

FIG. 5 illustrates another embodiment of the substrate of the inventivepower module 1. Here the layout of the tracks are similar to that shownin FIG. 2. FIG. 6 shows an improvement of the layout illustrated in FIG.5 where slots 301, 302 have been in load track 11 added for currentshaping in order to balance the commutation paths of chips 107,108 and104. Such current slots can be used to equalise current path lengthbetween the different chips.

FIG. 7 shows a similar improvement of the layout illustrated in FIG. 4.As in FIG. 6, current-shaping slots 301, 302 have also been added in theload track 11.

While the present disclosure has been illustrated and described withrespect to a particular embodiment thereof, it should be appreciated bythose of ordinary skill in the art that various modifications to thisdisclosure may be made without departing from the spirit and scope ofthe present disclosure.

What is claimed is:
 1. A power module providing a half bridge, the powermodule comprising: at least one substrate comprising an inner loadtrack, two intermediate load tracks and two outer load tracks, whereinthe inner load track is elongated and extends substantially across theat least one substrate in a first direction; wherein a first externalterminal is mounted on at least one of the intermediate load tracks atone end of the power module in the first direction; wherein a secondexternal terminal is mounted on at least one of the outer load tracksand a third external terminal is mounted on the inner load track;wherein the second and third external terminals are mounted at the otherend of the power module to the first external terminal mounted on atleast one of the intermediate load tracks in the first direction;wherein semiconductor switches are mounted on the outer load tracks andare electrically connected to the intermediate load track; whereinsemiconductor switches are mounted on the intermediate load tracks andare electrically connected to the inner load track; wherein eachintermediate load track comprises a first elongated arm extending in thefirst direction between the outer load track and the inner load trackwith respect to a second direction at right angles to the firstdirection; and wherein at least one semiconductor switch is mounted onan outer load track and electrically connected to an elongated arm ofone of the intermediate load tracks.
 2. The power module according toclaim 1, wherein the layout of the load tracks is symmetric about a lineextending in the first direction.
 3. The power module according to claim1, wherein a gate contact pad is positioned centrally in a group ofsemiconductor switches and wherein gate connections extend radially fromthe gate contact pad to the semiconductor switches.
 4. The power moduleaccording to claim 1, wherein one or more external gate contactterminal(s) is/are placed on the external surface of the power module,extending substantially orthogonally to the plane of the substrate. 5.The power module according to claim 1, wherein the at least onesemiconductor switch mounted on an intermediate load track andelectrically connected to the inner load track is connected to the innerload track through wirebonds.
 6. The power module according to claim 5,wherein the wirebonds of the at least one semiconductor switch passesover another semiconductor switch mounted on the intermediate load trackbefore contacting the inner load track.
 7. The power module according toclaim 2, wherein a gate contact pad is positioned centrally in a groupof semiconductor switches and wherein gate connections extend radiallyfrom the gate contact pad to the semiconductor switches.
 8. The powermodule according to claim 2, wherein one or more external gate contactterminal(s) is/are placed on the external surface of the power module,extending substantially orthogonally to the plane of the substrate. 9.The power module according to claim 3, wherein one or more external gatecontact terminal(s) is/are placed on the external surface of the powermodule, extending substantially orthogonally to the plane of thesubstrate.
 10. The power module according to claim 1, wherein at leastone of the intermediate load tracks comprises at least a first elongatedarm extending in the first direction alongside at least the one of theouter load tracks and/or at least one of the outer load tracks comprisesat least a first elongated arm extending in the first directionalongside at least the one of the intermediate load tracks.
 11. Thepower module according to claim 1, wherein at least one of theintermediate load tracks and at least one of the outer load tracks arearranged side-by-side in the first direction.
 12. A power moduleproviding a half bridge, the power module comprising: at least onesubstrate comprising an inner load track, two intermediate load tracksand two outer load tracks, wherein the inner load track is elongated andextends substantially across the at least one substrate in a firstdirection; wherein a first external terminal is mounted on at least oneof the intermediate load tracks at one end of the power module in thefirst direction; wherein a second external terminal is mounted on atleast one of the outer load tracks and a third external terminal ismounted on the inner load track; wherein the second and third externalterminals are mounted at the other end of the power module to the firstexternal terminal mounted on at least one of the intermediate loadtracks in the first direction; wherein two rows of semiconductorswitches are mounted on the intermediate load tracks and areelectrically connected to the inner load track through wirebonds; andwherein the wirebonds of one row of the two rows of semiconductorswitches pass over the other row of the two rows of semiconductorswitches before contacting the inner load track.
 13. The power moduleaccording to claim 12, wherein semiconductor switches are mounted on theouter load tracks and are electrically connected to the intermediateload track.
 14. The power module according to claim 12, wherein eachintermediate load track comprises a first elongated arm extending in thefirst direction between the outer load track and the inner load trackwith respect to a second direction at right angles to the firstdirection.
 15. The power module according to claim 12, wherein at leastone semiconductor switch is mounted on an outer load track andelectrically connected to an elongated arm of one of the intermediateload tracks.
 16. The power module according to claim 12, wherein thelayout of the load tracks is symmetric about a line extending in thefirst direction.
 17. The power module according to claim 12, wherein agate contact pad is positioned centrally in a group of semiconductorswitches of the two rows of semiconductor switches, and wherein gateconnections extend radially from the gate contact pad to the group ofsemiconductor switches.
 18. The power module according to claim 12,wherein each row of the two rows of semiconductor switches lie on arespective plane extending in the first direction.
 19. The power moduleaccording to claim 12, wherein at least one of the intermediate loadtracks and at least one of the outer load tracks are arrangedside-by-side in the first direction.
 20. The power module according toclaim 12, wherein at least one of the intermediate load tracks comprisesat least a first elongated arm extending in the first directionalongside at least the one of the outer load tracks and/or at least oneof the outer load tracks comprises at least a first elongated armextending in the first direction alongside at least the one of theintermediate load tracks.